Since the first report of ferroelectricity in nanoscale HfO2-based thin films in 2011, this silicon-
compatible binary oxide has quickly garnered intense interest in academia and industry, and …

The polarization switching mechanism in ferroelectric ZrO2 involves the nucleation and
subsequent migration of nonpolar domain boundaries; however, the fundamental …

Abstract HfO2/ZrO2‐based ferroelectrics present tremendous potential for next‐generation
non‐volatile memory due to their high scalability and compatibility with silicon technology …

The discovery of ferroelectric phases in HfO2 offers insights into ferroelectricity. Its unique
fluorite structure and complex polarization switching pathways exhibit distinct characteristics …

This review examines the performance variations of pristine and doped high‐k materials
deposited using atomic layer deposition (ALD). This paper explores the fundamental …

Determining the stability of complex phases in HfO2 is fundamental to advancing its
development and application as ferroelectric material. However, there is ongoing debate …

In this paper, the combinations of sandwich stacking structures of antiferroelectric/
ferroelectric doped hafnium oxide are systematically explored. The sandwich stacking …

This review presents an overview of the developmental history of hafnium-based
ferroelectric materials and their various potential applications. It delves into the origins of …