Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …

Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN,
featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet …

The demand for high-efficient and robust power semiconductors in harsh environments such
as high temperature and high voltage has been enlarged with the fast development of the …

We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

Different phases of Ga2O3 have been regarded as superior platforms for making new‐
generation high‐performance electronic devices. However, understanding of thermal …

We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by
liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 …

Photonics devices working in the ultraviolet and visible (UV–Vis) spectra have drawn great
attention due to their potential applications in the optical computing, communication, and bio …

We investigate the thermal stability of single-phase undoped epitaxial rhombohedral α-and
bi-axially-symmetric, monoclinic β-Ga 2 O 3 thin films grown on sapphire substrates by liquid …