Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG)
formation at ε-AlGaO 3/ε-Ga 2 O 3 heterointerface and the effect of spontaneous polarization …

Films of α-Ga 2 O 3 doped with Sn were grown by halide vapor phase epitaxy (HVPE) on
planar and patterned sapphire substrates. For planar substrates, with the same high Sn flow …

Electron beam lithography uses an accelerated electron beam to fabricate patterning on an
electron-beam-sensitive resist but requires complex dry etching or lift-off processes to …

In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …

Control of phase formation of (AlxGa1 − x)2O3 thin films on c-plane Al2O3 - IOPscience This
site uses cookies. By continuing to use this site you agree to our use of cookies. To find out …

Herein, single-domain κ-Ga2O3 thin films were grown on FZ-grown ε-GaFeO3 substrates via
a step-flow growth mode. The ε-GaFeO3 possessing the same crystal structure and similar …

The influence of In on the growth of ɛ-Ga 2 O 3 by plasma-assisted molecular beam epitaxy
is investigated. We demonstrate alloying of ɛ-Ga 2 O 3 with In and describe its incorporation …

High quality heteroepitaxial (001)-oriented κ-(Al x Ga 1− x) 2 O 3/κ-Ga 2 O 3 quantum well
superlattice heterostructures were deposited by tin-assisted pulsed laser deposition on c …