A large number of factors such as the increasingly stringent pollutant emission policies,
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …

The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC)
mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium …

Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …

High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …

Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …

Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …

Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

In high-power applications, parallel connection of discrete silicon carbide (SiC) mosfet s is
necessary to increase the current rating. However, the unbalanced dynamic current during …

This article presents quick analytical prediction methods of switching loss, turn-on/off
overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based …

In high-current applications such as traction inverters, SiC mosfet s are paralleled to
increase the current rating. One major issue with paralleling SiC mosfet s is the dynamic …