Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Silicon (Si) and/or germanium (Ge) nanomembranes (NMs) play crucial roles in various
applications, including conventional microelectronics, as well as recently emerging high …

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …

Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

GeSn alloys are promising candidates for complementary metal‐oxide‐semiconductor‐
compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has …

GeSn alloys have been regarded as a potential lasing material for a complementary metal–
oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

High tensile strains in Ge are currently studied for the development of integrated laser
sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to …