Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

In-sensor processing, which can reduce the energy and hardware burden for many machine
vision applications, is currently lacking in state-of-the-art active pixel sensor (APS) …

Large-scale growth of transition metal dichalcogenides and their subsequent integration
with compound semiconductors is one of the major obstacles for two-dimensional materials …

The densification of integrated circuits requires thermal management strategies and high
thermal conductivity materials,–. Recent innovations include the development of materials …

Semiconductors require stable do** for applications in transistors, optoelectronics, and
thermoelectrics. However, this has been challenging for two-dimensional (2D) materials …

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-
specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable …

Strain engineering is an important method for tuning the properties of semiconductors and
has been used to improve the mobility of silicon transistors for several decades. Recently …

The unique properties of heterostructure materials make them become a promising
candidate for high-performance room-temperature (RT) NO 2 sensing. Herein, a pn …