A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …
and they have played a key role in the huge development that the semiconductor industry …
Solution-processed memristors: performance and reliability
Memristive devices are gaining importance in the semiconductor industry for applications in
information storage, artificial intelligence cryptography and telecommunication. Memristive …
information storage, artificial intelligence cryptography and telecommunication. Memristive …
On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors
Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
Low-voltage-operation of flexible organic C8-BTBT thin-film transistors with a reactively sputtered AlOx gate dielectric
High-k dielectrics are frequently used for organic thin-film transistors (OTFTs), which
facilitate the reduction of the device's operating voltage and enhance the total electrical …
facilitate the reduction of the device's operating voltage and enhance the total electrical …
Dielectric breakdown in chemical vapor deposited hexagonal boron nitride
Insulating films are essential in multiple electronic devices because they can provide
essential functionalities, such as capacitance effects and electrical fields. Two-dimensional …
essential functionalities, such as capacitance effects and electrical fields. Two-dimensional …
Study on the connection between the set transient in RRAMs and the progressive breakdown of thin oxides
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …
Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study
The role of the bilayered structure of the gate oxide on the dynamics of progressive
breakdown is systematically studied on Au/Cr/HfO 2/Al 2 O 3/InGaAs metal–oxide …
breakdown is systematically studied on Au/Cr/HfO 2/Al 2 O 3/InGaAs metal–oxide …
Wear-out and breakdown of Ta2O5/Nb: SrTiO3 stacks
Abstract Tantalum oxide (Ta 2 O 5) is widely used in electronics, with important applications
in backend capacitors and memristors. However, major technological challenges have to be …
in backend capacitors and memristors. However, major technological challenges have to be …
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
Because of the atomic nature of the system under study, an estimation of the temperature of
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be …
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be …