InP-based transistor fabrication
5,061,644 5,079,616 5,091,333 5,091,767 5,093,699 5,098,850 5,105,247 5,108,947
5,156,995 5,159,413 5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 …
5,156,995 5,159,413 5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 …
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
(65) Prior Publication Data(Continued) US 2011 FOO49568 A1 Mar. 3, 2011 OTHER
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …
Tri-gate field-effect transistors formed by aspect ratio trap**
AJ Lochtefeld - US Patent 7,799,592, 2010 - Google Patents
Semiconductor structures include a trench formed proximate a substrate including a first
semiconductor material. A crystalline material including a second semiconductor material …
semiconductor material. A crystalline material including a second semiconductor material …
Defect reduction using aspect ratio trap**
J Bai, JS Park, AJ Lochtefeld - US Patent 8,173,551, 2012 - Google Patents
US8173551B2 - Defect reduction using aspect ratio trap** - Google Patents
US8173551B2 - Defect reduction using aspect ratio trap** - Google Patents Defect …
US8173551B2 - Defect reduction using aspect ratio trap** - Google Patents Defect …
Semiconductor sensor structures with reduced dislocation defect densities
Z Cheng, JG Fiorenza, C Sheen… - US Patent 8,253,211, 2012 - Google Patents
5,091,333 5,091,767 5,093,699 5,098,850 5,105,247 5,108,947 5,156,995 5,159,413
5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 5,269,852 5,269,876 …
5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 5,269,852 5,269,876 …
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
J Li, AJ Lochtefeld - US Patent 9,153,645, 2015 - Google Patents
US9153645B2 - Lattice-mismatched semiconductor structures with reduced dislocation
defect densities and related methods for device fabrication - Google Patents US9153645B2 …
defect densities and related methods for device fabrication - Google Patents US9153645B2 …
Lattice-mismatched semiconductor structures and related methods for device fabrication
AJ Lochtefeld - US Patent 7,777,250, 2010 - Google Patents
5,034,337 A 7, 1991 Mosher et al. 5,061,644 A 10, 1991 Yue et al. 5,091,333 A 2f1992 Fan
et al. 5,091,767 A 2f1992 Bean et al. 5,093,699 A 3, 1992 Weichold et al. 5,105,247 A …
et al. 5,091,767 A 2f1992 Bean et al. 5,093,699 A 3, 1992 Weichold et al. 5,105,247 A …
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited
area regions having upper por tions Substantially exhausted of threading dislocations, as …
area regions having upper por tions Substantially exhausted of threading dislocations, as …
Photovoltaics on silicon
J Li, AJ Lochtefeld, C Sheen, Z Cheng - US Patent 9,508,890, 2016 - Google Patents
4,551.394 A 11/1985 Betsch et al. 4,651,179 A 3, 1987 Reichert 4,727,047 A 2f1988 Bozler
et al. 4,774,205 A 9, 1988 Choi et al. 4,789,643 A 12/1988 Kajikawa et al. 4,826,784. A …
et al. 4,774,205 A 9, 1988 Choi et al. 4,789,643 A 12/1988 Kajikawa et al. 4,826,784. A …
Solutions for integrated circuit integration of alternative active area materials
AJ Lochtefeld, MT Currie, ZY Cheng… - US Patent …, 2009 - Google Patents
US PATENT DOCUMENTS 6,920, 159 B2 7/2005 Sidorin et al. 6,921,673 B2 7/2005
Kobayashi et al. 5,166,767 A 11/1992 Kapoor et al. 6,946,683 B2 9, 2005 Sano et al …
Kobayashi et al. 5,166,767 A 11/1992 Kapoor et al. 6,946,683 B2 9, 2005 Sano et al …