Low-noise amplifier design considerations for use in antenna arrays

L Belostotski, B Veidt, KF Warnick… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This work analyzes the implications of noise coupling in arrays of antennas on the design of
low-noise amplifiers (LNAs). To select LNA design parameters in a manner familiar to LNA …

No noise is good noise: Noise matching, noise canceling, and maybe a bit of both for wide-band LNAs

L Belostotski - IEEE Microwave Magazine, 2016 - ieeexplore.ieee.org
Researchers have described the concept of noise matching since at least the 1950s, with
studies demonstrating the interrelationships among the noise factor of a low-noise amplifier …

On the number of noise parameters for analyses of circuits with MOSFETs

L Belostotski - IEEE transactions on microwave theory and …, 2011 - ieeexplore.ieee.org
The inequality relating F min and Lange invariant N for any noisy linear two-port network has
been known since the 1980s. However, the applicability of this inequality to MOSFETs is not …

Correct equations for minimum noise measure of a microwave transistor amplifier

C Poole, R Grammenos - IEEE Transactions on Microwave …, 2021 - ieeexplore.ieee.org
New equations for circles of constant noise measure in the source reflection coefficient
plane are presented, and these are used to derive closed-form expressions for the minimum …

Noise parameters of gilbert cell mixers

M Himmelfarb, L Belostotski - IEEE Transactions on Microwave …, 2016 - ieeexplore.ieee.org
This paper describes a method for characterizing mixer noise in terms of several noise
parameters. A measurement method for extracting the noise parameters is proposed and …

The theory of special noise invariants

M Spasaro, F Alimenti, D Zito - IEEE Transactions on Circuits …, 2018 - ieeexplore.ieee.org
This paper reports a novel systematic theory of the noise invariants of two-port linear noisy
networks under lossless reciprocal input and output impedance transformations. The theory …

Noise temperature extraction procedure for characterization of on-wafer devices

L Boglione - US Patent 9,500,688, 2016 - Google Patents
(57) ABSTRACT A procedure for obtaining noise temperatures of a field effect transistor
(FET) embedded on a wafer through an analytical procedure which processes measured …

Considerations on the Ratio and the Noise Correlation Matrix of Active and Passive Two-Port Networks

L Boglione - IEEE transactions on microwave theory and …, 2013 - ieeexplore.ieee.org
The constraint on the Wiatr–Pospieszalski (WP) parameter Θ_\rmW\!P=4NT_\rmo/T_\rmm\
leqslant2, where N is the Lange invariant and T_\rmm the minimum equivalent noise …

A noise parameters extraction procedure suitable for on-wafer device characterization

L Boglione - 2012 International Semiconductor Conference …, 2012 - ieeexplore.ieee.org
This paper describes a new procedure to extract the noise parameters of on-wafer devices.
The procedure is based on multiple noise figure measurements of similar devices of different …

Method and system for extraction of noise parameters of nonlinear devices

L Belostotski, M Himmelfarb - US Patent 9,929,757, 2018 - Google Patents
Noise parameters are used to characterize noise performance of linear devices, such as
amplifiers. Such noise parameters have not been used for frequency conversion devices …