The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …

Bulk trap** and its effects on threshold voltage hysteresis (ΔV TH) in Al 2 O 3/AlGaN/GaN
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …

Gallium nitride (GaN) has been considered one of the most promising materials for the next-
generation power and radio-frequency electronic devices, as they can operate at higher …

A silicon nitride (SiN x) film deposited at 500 C by plasma-enhanced atomic layer deposition
(PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor …

With the continuous improvement of the power density and operating frequency in power
conversion systems, it is necessary to develop the new power electronic products with better …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

Robust and reliable gate scheme is crucial in develo** the enhancement-mode (E-mode)
AlGaN/GaN metal–insulator–semiconductor (MIS)-high electron mobility transistors …

Gallium nitride transistors are going to dominate the power semiconductor market in the
coming years. The natural form of GaN-based devices is “normally-on” or depletion mode (d …