Methods for forming a multi-threshold voltage device on a substrate are provided herein. In
some embodiments, the method of forming a multi-threshold voltage device may include (a) …

An embodiment method of controlling threshold voltages in a fin field effect transistor
(FinFET) includes forming a dummy gate over a central portion of a fin, the central portion of …

We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …

This paper presents a one-sided Schmitt-trigger-based 9T static random access memory cell
with low energy consumption and high read stability, write ability, and hold stability yields in …

FinFETs have emerged as the solution to short channel effects at the 22-nm technology
node and beyond. Previously, there have been few studies on the impact of fin cross section …

Since the introduction of fast integrated circuits, semiconductor manufacturers have
concentrated their efforts on reducing the size of transistors. Increased working frequencies …

In an increasing interconnect resistance era and aggressive metal pitch scaling, the
elevating RC delay could significantly shadow the improvements from advanced device …

This article reports on the impact of back gate bias on the transport properties and
performance of 22 nm fully depleted silicon-on-insulator (FD-SOI) MOSFETs. FD-SOI …

Cryogenic computing, which is to run a computer at extremely low temperatures (eg, 77K), is
a highly promising solution to dramatically improve the computer's performance and power …

The precise characterization of the do** profile is crucial for optimizing the performance
and structural integrity of semiconductor devices. As the size of semiconductor devices …