Magnetic tunnel junction applications

N Maciel, E Marques, L Naviner, Y Zhou, H Cai - Sensors, 2019 - mdpi.com
Spin-based devices can reduce energy leakage and thus increase energy efficiency. They
have been seen as an approach to overcoming the constraints of CMOS downscaling …

Electromagnetic radiation effects on MgO-based magnetic tunnel junctions: A review

D Seifu, Q Peng, K Sze, J Hou, F Gao, Y Lan - Molecules, 2023 - mdpi.com
Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic
memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ …

Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory

H Zhang, W Kang, L Wang, KL Wang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Stateful in-memory logic (IML) is a promising paradigm to realize the unity of data storage
and processing in the same die, exhibiting great feasibility to break the bottleneck of the …

Potential of AlP and GaN as barriers in magnetic tunnel junctions

G Shukla, HM Abdullah, U Schwingenschlögl - Nanoscale, 2023 - pubs.rsc.org
AlP and GaN are wide band gap semiconductors used industrially in light emitting diodes.
We investigate their potential as tunnel barriers in magnetic tunnel junctions, employing …

Spintronic processing unit within voltage-gated spin Hall effect MRAMs

H Zhang, W Kang, B Wu, P Ouyang… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Realization of the unity of processing and storage in the same chip/die has initialized a
promising research direction of processing-in-memory (PIM), attempting to address the …

Energy-aware adaptive rate and resolution sampling of spectrally sparse signals leveraging VCMA-MTJ devices

S Salehi, MB Mashhadi, A Zaeemzadeh… - IEEE Journal on …, 2018 - ieeexplore.ieee.org
This paper devises a novel adaptive framework for the energy-aware acquisition of
spectrally sparse signals. The adaptive quantized compressive sensing (CS) techniques …

SLIM-ADC: Spin-based logic-in-memory analog to digital converter leveraging SHE-enabled domain wall motion devices

S Salehi, RF DeMara - Microelectronics Journal, 2018 - Elsevier
This paper devises a novel Analog to Digital Converter (ADC) framework for energy-aware
acquisition of analog signals with Logic-in-Memory capabilities. The beyond-CMOS …

MESO-ADC: The ADC design using MESO device

J Zeng, P Yi, B Chen, C Huang, X Qi, S Qiu… - Microelectronics …, 2021 - Elsevier
In this paper, we propose a new 3-bit ADC based on magnetoelectric spin–orbit (MESO)
device. By adjusting the thickness of the magnetoelectric part of MESOs, the ADC possesses …

Spin-orbit-torque-based devices, circuits and architectures

F Moradi, H Farkhani, B Zeinali, H Ghanatian… - arxiv preprint arxiv …, 2019 - arxiv.org
Spintronics, the use of spin of an electron instead of its charge, has received huge attention
from research communities for different applications including memory, interconnects, logic …

A NAND-SPIN-Based Magnetic ADC

B Wu, Z Wang, Y Li, Y Wang, D Liu… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This brief introduces a 3-bit magnetic analog-to-digital converter (MADC) employing the
NAND-SPIN based multi-bit device which has the same structure as the NAND-SPIN …