Обобщены экспериментальные и теоретические результаты последних лет по
модификации атомной и электронной структуры поверхности различных …

Recent experimental and theoretical data on modification of the atomic and electronic
structures of the surface of different III–V semiconductors by electrolyte solutions are …

In this work, we present the conception and study of gallium nitride (GaN) nanostructures on
a gallium arsenide (GaAs) substrate with (111) A orientation. The nanostructures were …

The contribution of XPS spectroscopy and its associated modeling to the study of metallic
and semiconductor nanostructure design is highlighted in this work. We first give a brief …

This work provides a new tool based on the complementarity between X-ray Photoelectron
Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). More …

Well-ordered clean InAs (111) A and B surfaces have been prepared using HCl–
isopropanol solutions and characterized using low-energy electron diffraction and …

The sequence of surface reconstructions on GaAs (001), usually observed under As
desorption in the temperature range from 450 to 580° C, was obtained by atomic hydrogen …

Synchrotron photoemission spectroscopy is applied to study the interaction of 2-propanol
with the clean GaAs (100) surface to understand the solid− solvent interaction at the …

Considering that it is impractical to utilize in situ surface diagnostic means to determine the
surface cleanliness of transmission-mode GaAs photocathodes in the vacuum device …

Heteroepitaxy of single-crystal PbSe on GaAs (100) and GaAs (211) B has been achieved
using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology …