Abstract Vertically integrated NAND (V‐NAND) flash memory is the main data storage in
modern handheld electronic devices, widening its share even in the data centers where …

Thin insulating layers are used to modulate a depletion region at the source of a thin‐film
transistor. Bottom contact, staggered‐electrode indium gallium zinc oxide transistors with a 3 …

This study investigated alterations in the physical and electrical characteristics of amorphous
ZnSnO (a-ZTO) thin films deposited by atomic layer deposition and a-ZTO thin film …

As oxide semiconductors increase in popularity with emerging flexible electronics, advances
in material performance may lead to parasitic and nonideal effects becoming more …

This work investigates the mechanism for the memory window (MW) suppression of the
ferroelectric‐thin film transistors (FETFTs) with an amorphous indium‐gallium‐zinc (a‐IGZO) …

A charge‐trap flash (CTF) device is fabricated using atomic‐layer‐deposited zinc tin oxide
(ZTO) as an n‐type amorphous oxide semiconductor (AOS) channel layer and its …

We introduced an organic interlayer into the Schottky contact interface to control the contact
property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the …

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 C deposited c-
axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 …

In this work, we performed systematic electrical characterization and analysis of indium–
gallium–zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with different Cu …

In this work, we proposed and demonstrated etch-stopper-layer (ESL) structured indium-
gallium-zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with hybrid …