Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
W Lei, J Antoszewski, L Faraone - Applied Physics Reviews, 2015 - pubs.aip.org
This article presents a review on the current status, challenges, and potential future
development opportunities for HgCdTe infrared materials and detector technology. A brief …
development opportunities for HgCdTe infrared materials and detector technology. A brief …
InAs/GaSb Type‐II Superlattice Detectors
EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
[PDF][PDF] Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary …
PE Hopkins - 2013 - core.ac.uk
The efficiency in modern technologies and green energy solutions has boiled down to a
thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …
thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
We report on the thermal boundary conductance across structurally-variant GaSb/GaAs
interfaces characterized by different dislocations densities, as well as variably-rough …
interfaces characterized by different dislocations densities, as well as variably-rough …
Strain-induced modulation of the band structure of GaAs/GaSb/GaAs core-dual-shell nanowires
Y Kang, B Meng, X Hou, P Wang, J Tang, L Wang… - Vacuum, 2024 - Elsevier
The amalgamation of high-strained core/shell geometries in nanowire (NW) heterostructures
with bandgap engineering enables the systems with novel transport and optical properties …
with bandgap engineering enables the systems with novel transport and optical properties …
ScN/GaN (11̅00): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures
P John, A Trampert, D Van Dinh, D Spallek… - Nano Letters, 2024 - ACS Publications
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN (11̅00) surface.
To this end, ScN is grown on freestanding GaN (11̅00) substrates and self-assembled GaN …
To this end, ScN is grown on freestanding GaN (11̅00) substrates and self-assembled GaN …
Mid-wave infrared InAs/GaSb type-II superlattice photodetector with nBp design grown on GaAs substrate
In this paper, we report the direct growth and characterization of a mid-wave infrared
InAs/GaSb type-II superlattice nBp photodetector on a GaAs substrate. The design consists …
InAs/GaSb type-II superlattice nBp photodetector on a GaAs substrate. The design consists …
[HTML][HTML] Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD
In this work we report the growth of the InAs/InAsSb type-II superlattice (T2SL) onto Si
substrates via the use of a GaSb/GaAs/Si buffer layer structure all grown by MOCVD …
substrates via the use of a GaSb/GaAs/Si buffer layer structure all grown by MOCVD …
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried
out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 …
out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 …
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm)
have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by …
have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by …