2020-01-29 Assigned to SUNRISE MEMORY CORPORATION reassignment SUNRISE
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US10840239B2 - 3D semiconductor device and structure - Google Patents US10840239B2 -
3D semiconductor device and structure - Google Patents 3D semiconductor device and …

A device, including: a first structure including first memory cells, the first memory cells
including first transistors; and a second structure including second memory cells, the second …

(57) ABSTRACT A memory array and single-crystal circuitry are provided by wafer bonding
(eg, adhesive wafer bonding or anodic wafer bonding) in the same integrated circuit and …

An integrated circuit memory includes a logic circuitry bonded to a memory array. For
example, the logic circuitry is formed separately from the memory array, and then the logic …

According to one embodiment, the array chip includes a three-dimensionally disposed
plurality of memory cells and a memory-side interconnection layer connected to the memory …

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an
example, a semicon ductor device includes a first semiconductor structure including a …

2019-02-19 Assigned to SANDISK TECHNOLOGIES LLC reassignment SANDISK
TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …

A method to process a 3D device, the method including: providing a first substrate including
a first level including a first single crystal silicon layer and a plurality of first transistors; …