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Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament
Amorphous Nb2O5 is proposed as the resistive switching layer for conductive bridge
random access memory. The Nb2O5 device is fabricated with the top Cu and bottom Au …
random access memory. The Nb2O5 device is fabricated with the top Cu and bottom Au …
[HTML][HTML] Threshold switching in forming-free anodic memristors grown on Hf–Nb combinatorial thin-film alloys
The development of novel materials with coexisting volatile threshold and non-volatile
memristive switching is crucial for neuromorphic applications. Hence, the aim of this work …
memristive switching is crucial for neuromorphic applications. Hence, the aim of this work …
[HTML][HTML] Threshold switching stabilization of NbO2 films via nanoscale devices
The stabilization of the threshold switching characteristics of memristive NbO x is examined
as a function of sample growth and device characteristics. Sub-stoichiometric Nb 2 O 5 was …
as a function of sample growth and device characteristics. Sub-stoichiometric Nb 2 O 5 was …
[HTML][HTML] Enhancement in neuromorphic NbO2 threshold switching at cryogenic temperatures
The electrical properties and performance characteristics of niobium dioxide (NbO 2)-
based threshold switching devices are examined at cryogenic temperatures …
based threshold switching devices are examined at cryogenic temperatures …
Investigation of the Modulated Threshold Memristor for Tunable Artificial Neuron
Y Wang, X Huang, H Xu, R Cao, Y Sun… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Threshold switching (TS) memristor with a simple structure and high biomimetic offers a
more promising way to implement an efficient artificial neuron than traditional methods. To …
more promising way to implement an efficient artificial neuron than traditional methods. To …