Semiconductor-based gas sensors have been applied to a variety of applications, including
environmental, safety, and health monitoring. Extensive efforts have been made to improve …

Abstract The use of Hf0. 5Zr0. 5O2 (HZO) films within hafnia‐based ferroelectric tunnel
junctions (FTJ) presents a promising avenue for next‐generation non‐volatile memory …

Interface issues with organic semiconductors on metal oxide challenge realizing a high‐
performance anti‐ambipolar transistor (AAT) with stable operation. The motivation behind …

The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting
crystals faces challenges due to diminished gate electrostatics and increased charge carrier …

In recent years, research on ferroelectric materials based on hafnium oxide has increased
because of promising advantages such as fast operating speeds and CMOS process …

In this study, a hybrid organic‐inorganic field‐effect transistor (FET) is proposed with n‐type
zinc‐tin oxide (ZTO) and p‐type dinaphtho [2, 3‐b: 2′, 3′‐f] thieno [3, 2‐b] thiophene …

The increasing demand of information and communication technology has pushed
conventional computing paradigm to its limit. In addition, physical and technological factors …

In recent years, neuromorphic computing has been rapidly developed to overcome the
limitations of von Neumann architecture. In this regard, the demand for high‐performance …

Gaseous pollutants, including nitrogen oxides, pose a severe threat to ecosystems and
human health; therefore, develo** reliable gas-sensing systems to detect them is …

We demonstrate the factors that determine the tunneling electroresistance (TER) of the
ferroelectric tunnel junction (FTJ) by investigating the effects of temperature () and the …