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Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
A brief review of single-event burnout failure mechanisms and design tolerances of silicon carbide power mosfets
Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors)
is of the highest priority for sustaining high-power systems in the space radiation …
is of the highest priority for sustaining high-power systems in the space radiation …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
Low-energy ion-induced single-event burnout in gallium oxide Schottky diodes
Low-energy ion-induced breakdown and single-event burnout (SEB) are experimentally
observed in beta-gallium oxide (-Ga2O3) Schottky diodes with voltages well below those of …
observed in beta-gallium oxide (-Ga2O3) Schottky diodes with voltages well below those of …
Single-Event Burnout in Vertical β-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics
Single-event burnout (SEB) is experimentally observed in structurally improved vertical Beta-
gallium oxide (-Ga2O3) Schottky barrier diodes (SBDs) with Pt/PtOx Schottky contacts and …
gallium oxide (-Ga2O3) Schottky barrier diodes (SBDs) with Pt/PtOx Schottky contacts and …
Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV·cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz
This work demonstrates the robust single-event irradiation hardness in 650-V E-mode p-
GaN HEMTs with source-connected buried metal structure. Such device design notably …
GaN HEMTs with source-connected buried metal structure. Such device design notably …
An improved single-event effect performance SiC MOSFET of hole extraction pillar combined with multilayer P-shield structure
R Yang, X Deng, X Li, H Wu, X Li, S Bai… - … on Electron Devices, 2024 - ieeexplore.ieee.org
A planar gate SiC MOSFET of hole extraction pillar combined with multilayer P-shield
structure (HEMP-MOS) is proposed and characterized to improve single-event burnout …
structure (HEMP-MOS) is proposed and characterized to improve single-event burnout …
Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
Latching current limiters (LCLs) provide individual overcurrent protection to payloads
protecting the satellite power bus. Under an overload, they limit the maximum current for a …
protecting the satellite power bus. Under an overload, they limit the maximum current for a …
High-energy proton and atmospheric-neutron irradiations of SiC power MOSFETs: SEB study and impact on channel and drift resistances
Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric
neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different …
neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different …
1.5-kV AlGaN/GaN MIS-HEMT with 3-D stacking pad-connected Schottky structure demonstrating radiation robustness against atmospheric neutrons
Atmospheric neutron-induced single-event burnout (SEB) is a severe reliability challenge for
terrestrial electronic components. In this work, the robust atmospheric neutron irradiation …
terrestrial electronic components. In this work, the robust atmospheric neutron irradiation …