Overcoming randomness does not rule out the importance of inherent randomness for functionality
Y Ilan - Journal of Biosciences, 2019 - Springer
Randomness is intrinsic to many natural processes. It is also clear that, under certain
conditions, disorders are not associated with functionality. Several examples in which …
conditions, disorders are not associated with functionality. Several examples in which …
An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing
Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …
Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing
R Zhang, R Su, C Shen, R **ao, W Cheng, X Miao - Sensors, 2023 - mdpi.com
Topological phase transition materials have strong coupling between their charge, spin
orbitals, and lattice structure, which makes them have good electrical and magnetic …
orbitals, and lattice structure, which makes them have good electrical and magnetic …
Control of oxygen vacancy ordering in brownmillerite thin films via ionic liquid gating
Oxygen defects and their atomic arrangements play a significant role in the physical
properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is …
properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is …
Topotactic phase transition driving memristive behavior
Redox‐based memristive devices are one of the most attractive candidates for future
nonvolatile memory applications and neuromorphic circuits, and their performance is …
nonvolatile memory applications and neuromorphic circuits, and their performance is …
Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High‐Density Resistive Switching Memory
Resistive switching (RS) memory has stayed at the forefront of next‐generation nonvolatile
memory technologies. Recently, a novel class of transition metal oxides (TMOs), which …
memory technologies. Recently, a novel class of transition metal oxides (TMOs), which …
Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO2.5 Thin Film through Oriented Oxygen-Vacancy Channels
Oxygen-vacancy-ordered brownmillerite oxides offer a reversible topotactic phase transition
by significantly varying the oxygen stoichiometry of the material without losing its lattice …
by significantly varying the oxygen stoichiometry of the material without losing its lattice …
Electric Field Control of Phase Transition and Tunable Resistive Switching in SrFeO2.5
MS Saleem, B Cui, C Song, Y Sun, Y Gu… - … applied materials & …, 2019 - ACS Publications
SrFeO x (SFO x) compounds exhibit ionic conduction and oxygen-related phase
transformation, having potential applications in solid oxide fuel cells, smart windows, and …
transformation, having potential applications in solid oxide fuel cells, smart windows, and …
Atomic-scale operando observation of oxygen diffusion during topotactic phase transition of a perovskite oxide
Topotactic phase transition of perovskite oxides enables fast, reversible oxygen transport
with minimal volume change, which is advantageous for applications in solid oxide fuel …
with minimal volume change, which is advantageous for applications in solid oxide fuel …
[HTML][HTML] Solid-state electrolyte gated synaptic transistor based on SrFeO2. 5 film channel
P Shi, D Wang, T Yu, R **ng, Z Wu, S Yan, L Wei… - Materials & Design, 2021 - Elsevier
In the past few years, synaptic device has become a hot topic in material science because of
the urgent demand of neuromorphic computing. Ionic liquids gated three-terminal synaptic …
the urgent demand of neuromorphic computing. Ionic liquids gated three-terminal synaptic …