Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

Throughout its previous four editions, Combustion has made a very complex subject both
enjoyable and understandable to its student readers and a pleasure for instructors to teach …

We show that strained epitaxial layers can relax by two competing mechanisms. At large
misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain …

The importance of stress and strain effects on surface physics are reviewed. For this purpose
the following points are developed.(1) The elastic, thermodynamics and atomistic definitions …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

▪ Abstract Heteroepitaxial structures with strained semiconductor thin films are widely used
in electronic and optoelectronic devices. One of the more important defect creation …

When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …