Raman strain–shift measurements and prediction from first-principles in highly strained silicon

N Roisin, MS Colla, JP Raskin, D Flandre - Journal of Materials Science …, 2023 - Springer
This work presents how first-principles simulations validated through experimental
measurements lead to a new accurate prediction of the expected Raman shift as a function …

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

N Roisin, MS Colla, R Scaffidi, T Pardoen, D Flandre… - Optical Materials, 2023 - Elsevier
A theoretical study of the band gap reduction under tensile stress is performed and validated
through experimental measurements. First-principles calculations based on density …

Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon

SS Mulay, G Becker, R Vayrette, JP Raskin… - Computational …, 2015 - Springer
Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in
several engineering fields. The fracture properties of polycrystalline silicon directly affect …

A versatile lab-on-chip test platform to characterize elementary deformation mechanisms and electromechanical couplings in nanoscopic objects

T Pardoen, MS Colla, H Idrissi… - Comptes …, 2016 - comptes-rendus.academie-sciences …
Une plate-forme d'essai nanomécanique sur puce a été récemment développée afin de
déformer, sous des conditions de chargement variées, des films minces, rubans et nanofils …

Roughness analysis in strained silicon-on-insulator wires and films

F Ureña, SH Olsen, E Escobedo-Cousin… - Journal of Applied …, 2014 - pubs.aip.org
Strained silicon is used to enhance performance in state-of-the-art CMOS. Under device
operating conditions, the effect of strain is to reduce the carrier scattering at the channel by a …

[BOOK][B] Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

MO Baykan - 2012 - search.proquest.com
Strained silicon technology is a well established method to enhance sub-100nm MOSFET
performance. With the scalability of process-induced strain, strained silicon channels have …

[PDF][PDF] Multiscale modelling framework for the fracture of thin polycrystalline films-Application to polysilicon

SS Mulay, G Becker, R Vayrette, JP Raskin, T Pardoen… - dial.uclouvain.be
The Micro-electro-mechanical systems (MEMS) are now widely used in several engineering
fields. The control of the deposition process of polycrystalline silicon makes it a key element …

[PDF][PDF] A versatile lab-on-chip test platform to characterize elementary deformation mechanisms and electromechanical couplings in nanoscopic objects

B Amin-Ahmadi, B Wang, D Schryversb, UK Bhaskar… - 2015 - academia.edu
The playground of solid-state physics has been enlarged in recent years owing to the
development of novel nanomechanical testing set-ups that allow deforming nano-sized …

Local characterisation of strain in silicon nanostructures

F Urena Begara - 2014 - theses.ncl.ac.uk
Strain engineering is used in the microelectronics industry for fabricating micro-and nano-
electromechanical systems (MEMS and NEMS) and state-of-the-art metal-oxide …

[BOOK][B] Strain effects in long to short channel mosfets: From drift-diffusion to quasi-ballistic transport

S Parthasarathy - 2012 - search.proquest.com
In the last decade, process induced uniaxial strain has emerged as a proven technique for
improving CMOS performance and is projected to be useful for future scaling. Transistor …