The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

Over the past decade, the field of two-dimensional (2D) layered materials has surged,
promising a new platform for studying diverse physical phenomena that are scientifically …

Wide band gap semiconductors are essential for today's electronic devices and energy
applications because of their high optical transparency, controllable carrier concentration …

SnS2 materials have attracted broad attention in the field of electrochemical energy storage
due to their layered structure with high specific capacity. However, the easy restacking …

The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a
field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing …

The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other
light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to …

Abstract van der Waals (vdW) heterostructures based on atomically thin 2D materials have
led to a new era in next‐generation optoelectronics due to their tailored energy band …

With advances in exfoliation and synthetic techniques, atomically thin films of
semiconducting transition metal dichalcogenides have recently been isolated and …