The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

T Knobloch, YY Illarionov, F Ducry, C Schleich… - Nature …, 2021 - nature.com
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …

Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

K Zhang, Y Feng, F Wang, Z Yang… - Journal of Materials …, 2017 - pubs.rsc.org
Two dimensional hexagonal boron nitride (2D-hBN), an isomorph of graphene with a very
similar layered structure, is uniquely featured by its exotic opto-electrical properties together …

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Y Wang, JC Kim, RJ Wu, J Martinez, X Song, J Yang… - Nature, 2019 - nature.com
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Recent advances in ultrathin two-dimensional nanomaterials

C Tan, X Cao, XJ Wu, Q He, J Yang, X Zhang… - Chemical …, 2017 - ACS Publications
Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-
dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Recent progress on graphene-analogous 2D nanomaterials: Properties, modeling and applications

B Liu, K Zhou - Progress in Materials Science, 2019 - Elsevier
Boosted by the great success of graphene, the past decade has witnessed the rapid
development of graphene-analogous two-dimensional (2D) nanomaterials. Despite the high …

2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

Z Lin, A McCreary, N Briggs, S Subramanian… - 2D …, 2016 - iopscience.iop.org
The rise of two-dimensional (2D) materials research took place following the isolation of
graphene in 2004. These new 2D materials include transition metal dichalcogenides, mono …

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

SL Li, K Tsukagoshi, E Orgiu, P Samorì - Chemical Society Reviews, 2016 - pubs.rsc.org
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

A Nourbakhsh, A Zubair, MS Dresselhaus… - Nano …, 2016 - ACS Publications
This paper studies band-to-band tunneling in the transverse and lateral directions of van der
Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential …

Approaching the intrinsic limit in transition metal diselenides via point defect control

D Edelberg, D Rhodes, A Kerelsky, B Kim, J Wang… - Nano …, 2019 - ACS Publications
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have
generated intense recent interest due to their novel optical and electronic properties and …