InAs nanostructures for solar cell: improved efficiency by submonolayer quantum dot
The effect of different quantum structures in the intrinsic region of a pin junction solar cell
(SC) on the optical and electrical properties have been investigated. SCs with different …
(SC) on the optical and electrical properties have been investigated. SCs with different …
[HTML][HTML] Anisotropic Strain Relaxation in Semipolar (11 2¯ 2) InGaN/GaN Superlattice Relaxed Templates
W Li, L Wang, R Chai, L Wen, Z Wang, W Guo, H Wang… - Nanomaterials, 2022 - mdpi.com
Semipolar (11 2¯ 2) InGaN/GaN superlattice templates with different periodical InGaN layer
thicknesses were grown on m-plane sapphire substrates using metal-organic chemical …
thicknesses were grown on m-plane sapphire substrates using metal-organic chemical …
Phonon dynamic behaviors induced by amorphous layers at heterointerfaces
An amorphous layer is commonly found at the interfaces of heterostructures due to lattice
and thermal mismatch between dissimilar materials. While existing research has explored …
and thermal mismatch between dissimilar materials. While existing research has explored …
Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells
In the manufacture of semiconductor devices, cracking of heterostructures has been
recognized as a major obstacle for their post-growth processing. In this work, we explore …
recognized as a major obstacle for their post-growth processing. In this work, we explore …
Indium segregation in ultra-thin In (Ga) As/GaAs single quantum wells revealed by photoluminescence spectroscopy
A nondestructive approach is described that is applicable for studying the In-segregation
phenomena in ultra-thin In (Ga) As/GaAs nanostructures grown by molecular beam epitaxy …
phenomena in ultra-thin In (Ga) As/GaAs nanostructures grown by molecular beam epitaxy …
Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition
S Li, P Shao, X Liang, S Chen, Z Li, X Su… - Chinese …, 2024 - iopscience.iop.org
We report molecular beam epitaxial growth and electrical and ultraviolet light emitting
properties of (AlN) m/(GaN) n superlattices (SLs), where m and n represent the numbers of …
properties of (AlN) m/(GaN) n superlattices (SLs), where m and n represent the numbers of …
Energetics of Interfaces and Strain Partition in GaN/AlN Pseudomorphic Superlattices
We present the results of a twofold experimental and computational study of (0001) GaN/AlN
multilayers forming pseudomorphic superlattices. High-Resolution Transmission Electron …
multilayers forming pseudomorphic superlattices. High-Resolution Transmission Electron …
Phonon dynamic behaviors induced by amorphous interlayer at heterointerfaces
Q Wang, J Zhang, V Chernysh, X Liu - arxiv preprint arxiv:2306.14901, 2023 - arxiv.org
Interface impedes heat flow in heterostructures and the interfacial thermal resistance (ITR)
has become a critical issue for thermal dissipation in electronic devices. To explore the …
has become a critical issue for thermal dissipation in electronic devices. To explore the …
[LIVRE][B] Optical Properties of Ultrathin In (Ga) As/GaAs and In (Ga) N/GaN Quantum Wells
Y Maidaniuk - 2020 - search.proquest.com
Recently, structures based on ultrathin quantum wells (QWs) began to play a critical role in
modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting …
modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting …