GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …

In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

The high-k nature of HfO 2 makes it a competitive gate oxide for various GaN-based power
devices, but the high trap densities at the HfO 2/GaN interface have hindered the …

Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …

This paper reports the influence of an ultrathin 1.5 nm atomic-layer-deposited HfO 2 blanket
layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H …

To reduce drain leakage current, carbon do** is introduced in the GaN layer of the p-GaN
HEMT device. The focus of this study is on the discussion of the abnormal current behavior …

This paper presents the simulation study of the impact of dielectric modulation on the
characteristics of a single-gate single-cavity and a single-gate dual-cavity AlGaN/GaN …

A compact model based on the Lambert function is used to describe IVT characteristics of
Schottky Barrier Diodes (SBDs) with gated-edge termination (GET) with either SiN or …

The present research provides a comprehensive investigation of the structural modification
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …

This study investigates the effect of O 2 plasma treatment on the physical and electrical
properties of the surface region in Schottky-gate AlGaN/GaN high electron mobility transistor …