The integration of graphene into microelectronic devices

G Ruhl, S Wittmann, M Koenig… - Beilstein journal of …, 2017 - beilstein-journals.org
Since 2004 the field of graphene research has attracted increasing interest worldwide.
Especially the integration of graphene into microelectronic devices has the potential for …

A graphene Zener–Klein transistor cooled by a hyperbolic substrate

W Yang, S Berthou, X Lu, Q Wilmart, A Denis… - Nature …, 2018 - nature.com
The engineering of cooling mechanisms is a bottleneck in nanoelectronics. Thermal
exchanges in diffusive graphene are mostly driven by defect-assisted acoustic phonon …

Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer

A Montanaro, G Piccinini, V Mišeikis… - Nature …, 2023 - nature.com
Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the
next generation antenna systems and networks. Here, we propose a low-power …

Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

A Inhofer, S Tchoumakov, BA Assaf, G Feve, JM Berroir… - Physical Review B, 2017 - APS
It is well established that topological insulators sustain Dirac fermion surface states as a
consequence of band inversion in the bulk. These states have a helical spin polarization …

High-frequency limits of graphene field-effect transistors with velocity saturation

Q Wilmart, M Boukhicha, H Graef, D Mele, J Palomo… - Applied Sciences, 2020 - mdpi.com
The current understanding of physical principles governing electronic transport in graphene
field effect transistors (GFETs) has reached a level where we can model quite accurately …

Engineering superconducting contacts transparent to a bipolar graphene

S Jang, GH Park, S Park, HW Jeong, K Watanabe… - Nano Letters, 2024 - ACS Publications
Graphene's exceptional electronic mobility, gate-tunability, and contact transparency with
superconducting materials make it ideal for exploring the superconducting proximity effect …

Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications

FA Chaves, D Jiménez, JE Santos, P Bøggild… - Nanoscale, 2019 - pubs.rsc.org
Creation of sharp lateral p–n junctions in graphene devices, with transition widths w well
below the Fermi wavelength λF of graphene's charge carriers, is vital to study and exploit …

Stability and Electronic Structure of Nitrogen-Doped Graphene-Supported Cun (n = 1–5) Clusters in Vacuum and under Electrochemical Conditions: Toward Sensor …

M Guba, T Höltzl - The Journal of Physical Chemistry C, 2024 - ACS Publications
Here, we present a detailed computational study of the stability and the electronic structure
of nitrogen-doped graphene (N4V2) supported Cu n (n= 1–5) clusters, which are promising …

Characterization of helical Luttinger liquids in microwave stepped-impedance edge resonators

A Gourmelon, H Kamata, JM Berroir, G Fève… - Physical Review …, 2020 - APS
Coulomb interaction has important consequences for the physics of quantum spin Hall edge
states, weakening the topological protection via two-particle scattering and renormalizing …

Ultra-long wavelength Dirac plasmons in graphene capacitors

H Graef, D Mele, M Rosticher… - Journal of Physics …, 2018 - iopscience.iop.org
Graphene is a valuable 2D platform for plasmonics as illustrated in recent THz and mid-
infrared optics experiments. These high-energy plasmons however, couple to the dielectric …