Solution-processed thin-film transistors (TFTs) are widely explored due to their high potential
in flexible, cost-effective, large-area electronics, such as wearable electronics, sensor …

Metal‐oxide‐semiconductor‐based thin‐film transistors (TFTs) are exploited in display
backplanes and X‐ray detectors fabricated by vacuum deposition and lithographic …

This work demonstrates successful large area inkjet printing of a thermally activated delayed
fluorescence (TADF) material as the emitting layer of organic light-emitting diodes (OLEDs) …

Wide band gap semiconductor Ga2O3 is a high potential material for fabricating next-
generation power electronics. However, the low conductivity and carrier mobility of Ga2O3 …

High-throughput printing-based fabrication has emerged as a key enabler of flexible
electronics given its unique capability for low-cost integration of circuits based on printed …

Recently inorganic-organic hybrid materials have been quickly arisen as promising
dielectric candidates for their applications in the fabrication of solution-processed metal …

It seems impossible to use silicon oxide as a suitable gate dielectric material in metal-oxide-
semiconductor field effect transistors. Many researchers have studied various metal oxides …

A rising demand in reliable, energy-efficient, and large-area electronics, particularly in the
realm of sol-gel oxide thin-film transistors (TFTs), has steered research focus away from …

This article investigates the application of inkjet printing (IjP) for the fabrication of low-
temperature electronics. It delineates the constituent components of inks employed in …

In this concise review, the recent advancements in fully inkjet‐printed (IJP) indium‐gallium‐
zinc‐oxide (IGZO) thin‐film transistors (TFTs) over the past years are discussed. IGZO has …