A 1 k-pixel video camera for 0.7–1.1 terahertz imaging applications in 65-nm CMOS
A 1 k-pixel camera chip for active terahertz video recording at room-temperature has been
fully integrated in a 65-nm CMOS bulk process technology. The 32× 32 pixel array consists …
fully integrated in a 65-nm CMOS bulk process technology. The 32× 32 pixel array consists …
Active terahertz imaging using Schottky diodes in CMOS: Array and 860-GHz pixel
R Han, Y Zhang, Y Kim, DY Kim… - IEEE Journal of Solid …, 2013 - ieeexplore.ieee.org
Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown
to be suitable for active THz imaging applications. Using a compact passive-pixel array …
to be suitable for active THz imaging applications. Using a compact passive-pixel array …
A CMOS high-power broadband 260-GHz radiator array for spectroscopy
R Han, E Afshari - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A high-power broadband 260-GHz radiation source using 65-nm bulk CMOS technology is
reported. The source is an array of eight harmonic oscillators with mutual coupling through …
reported. The source is an array of eight harmonic oscillators with mutual coupling through …
Silicon Integrated 280 GHz Imaging Chipset With 44 SiGe Receiver Array and CMOS Source
In this paper, we report an integrated silicon-based active imaging chipset with a detector
array in 0.13 μm SiGe process and a CMOS-based source array operating in the 240-290 …
array in 0.13 μm SiGe process and a CMOS-based source array operating in the 240-290 …
A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched Gmax-Core
This article proposes a high-gain and low-power low-noise amplifier (LNA) by adopting a
simultaneous noise-and input-matched (SNIM) maximum achievable gain (G max) core. The …
simultaneous noise-and input-matched (SNIM) maximum achievable gain (G max) core. The …
A 1kpixel CMOS camera chip for 25fps real-time terahertz imaging applications
Future imaging applications in the submillimeter-Wave range (300GHz to 3THz) require RF
systems that can achieve high sensitivity and portability at low power consumption levels. In …
systems that can achieve high sensitivity and portability at low power consumption levels. In …
A CMOS fully integrated 860-GHz terahertz sensor
This paper proposes a CMOS fully integrated 860-GHz terahertz (THz) sensor. The sensor
integrates a single-NMOS THz detector, a low-noise chopper instrumentation amplifier and a …
integrates a single-NMOS THz detector, a low-noise chopper instrumentation amplifier and a …
Design and demonstration of 820-GHz array using diode-connected NMOS transistors in 130-nm CMOS for active imaging
DY Kim, S Park, R Han… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
An 820-GHz 8× 8 diode-connected NMOS transistor active imaging array with an on-chip
pixel selection circuit was demonstrated in a 130-nm CMOS technology. The noise …
pixel selection circuit was demonstrated in a 130-nm CMOS technology. The noise …
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13 μm digital CMOS
R Han, Y Zhang, Y Kim, DY Kim… - … Solid-State Circuits …, 2012 - ieeexplore.ieee.org
Millimeter and sub-millimeter-wave imaging using solid-state circuits is gaining attention for
security and medical applications. To lower cost and increase integration, MOSFETs in …
security and medical applications. To lower cost and increase integration, MOSFETs in …
Lens-integrated THz imaging arrays in 65nm CMOS technologies
THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and
characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens …
characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens …