Benchmarking noise and dephasing in emerging electrical materials for quantum technologies
As quantum technologies develop, a specific class of electrically conducting materials is
rapidly gaining interest because they not only form the core quantum‐enabled elements in …
rapidly gaining interest because they not only form the core quantum‐enabled elements in …
Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids
Exploration of van der Waals heterostructures in the field of optoelectronics has produced
photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate …
photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate …
High‐Efficiency Infrared Sensing with Optically Excited Graphene‐Transition Metal Dichalcogenide Heterostructures
Binary van der Waals heterostructures of graphene (Gr) and transition metal dichalcogenide
(TMDC) have evolved as a promising candidate for photodetection with very high …
(TMDC) have evolved as a promising candidate for photodetection with very high …
Suppression of 1/f noise in graphene due to anisotropic mobility fluctuations induced by impurity motion
M Kamada, W Zeng, A Laitinen, J Sarkar… - Communications …, 2023 - nature.com
Low frequency resistance variations due to mobility fluctuations is one of the key factors of
1/f noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) …
1/f noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) …
Low-Frequency Resistance Noise in Near-Magic-Angle Twisted Bilayer Graphene
P Pal, S Bhowmik, A Parappurath, S Kakkar… - ACS …, 2025 - ACS Publications
The low-frequency resistance fluctuations, or noise, in electrical resistance not only set a
performance benchmark in devices but also form a sensitive tool to probe nontrivial …
performance benchmark in devices but also form a sensitive tool to probe nontrivial …
Origin of electrical noise near charge neutrality in dual gated graphene device
This Letter investigates low frequency 1/f noise in an hBN encapsulated graphene device in
a dual gated geometry. The noise study is performed as a function of top gate carrier density …
a dual gated geometry. The noise study is performed as a function of top gate carrier density …
Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC (0001)
In this report, we introduce a novel method based on low-frequency noise analysis for the
assessment of quality and pattern of inhomogeneity in intentionally-aged Hall effect sensors …
assessment of quality and pattern of inhomogeneity in intentionally-aged Hall effect sensors …
[HTML][HTML] Adsorption and dissociation of NO2 on MoS2 doped with p-block elements
Nitrogen dioxide (NO 2) is a chemical compound produced in large amounts as a byproduct
of combustion in vehicles and industrial processes. In its gas form, it is harmful to both …
of combustion in vehicles and industrial processes. In its gas form, it is harmful to both …
Critical current fluctuations in graphene Josephson junctions
We have studied 1/f noise in critical current I c in h-BN encapsulated monolayer graphene
contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching …
contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching …
Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors
We have previously shown that one-dimensional edge contact to two-dimensional
heterostructure field effect transistors with a graphene channel, and hexagonal boron nitride …
heterostructure field effect transistors with a graphene channel, and hexagonal boron nitride …