Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Deep traps in GaN-based structures as affecting the performance of GaN devices
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport
X Yao, B Zhang, H Hu, Y Wang, Z Kong, Y Wu… - Journal of Crystal …, 2023 - Elsevier
Abstract SiC, GaN, diamond, and AlN known as wide band-gap semiconductors, integrate
the advantages of microelectronics, optoelectronics, and power electronics. The ultra-wide …
the advantages of microelectronics, optoelectronics, and power electronics. The ultra-wide …
A first-principles understanding of point defects and impurities in GaN
Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics
The interest in plasmonic technologies surrounds many emergent optoelectronic
applications, such as plasmon lasers, transistors, sensors and information storage. Although …
applications, such as plasmon lasers, transistors, sensors and information storage. Although …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type do** over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
Origins of optical absorption and emission lines in AlN
To aid the development of AlN-based optoelectronics, it is essential to identify the defects
that cause unwanted light absorption and to minimize their impact. Using hybrid functional …
that cause unwanted light absorption and to minimize their impact. Using hybrid functional …
[HTML][HTML] High electron mobility in AlN: Si by point and extended defect management
High room temperature n-type mobility, exceeding 300 cm 2/Vs, was demonstrated in Si-
doped AlN. Dislocations and CN− 1 were identified as the main compensators for AlN grown …
doped AlN. Dislocations and CN− 1 were identified as the main compensators for AlN grown …
Origination and evolution of point defects in AlN film annealed at high temperature
While high temperature annealing has been proven to be an effective strategy to reduce
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …
[HTML][HTML] KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
A controllable and smooth potassium hydroxide-based wet etching technique was
developed for the AlGaN system. High selectivity between AlN and Al x Ga 1− x N (up to …
developed for the AlGaN system. High selectivity between AlN and Al x Ga 1− x N (up to …
Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy
A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …