The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Review of GaN-based devices for terahertz operation
K Ahi - Optical Engineering, 2017 - spiedigitallibrary.org
GaN provides the highest electron saturation velocity, breakdown voltage, operation
temperature, and thus the highest combined frequency-power performance among …
temperature, and thus the highest combined frequency-power performance among …
Recent progress on micro-LEDs
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
Role of edge engineering in photoconductivity of graphene nanoribbons
The effect of edge engineering of graphene nanoribbons (GNRs) on their ultrafast
photoconductivity is investigated. Three different GNRs were fabricated by bottom-up …
photoconductivity is investigated. Three different GNRs were fabricated by bottom-up …
Charge carrier cooling bottleneck opens up nonexcitonic gain mechanisms in colloidal CdSe quantum wells
Ultrathin two-dimensional (2D) materials have received much attention in the past years for
a wide variety of photonic applications because of their pronounced room-temperature …
a wide variety of photonic applications because of their pronounced room-temperature …
[HTML][HTML] Unity quantum efficiency in III-nitride quantum wells at low temperature: Experimental verification by time-resolved photoluminescence
P Farr, S Sidikejiang, P Horenburg, H Bremers… - Applied Physics …, 2021 - pubs.aip.org
Using time-resolved photoluminescence (PL) measurements, we present an experimental
verification for 100% internal quantum efficiency (IQE) of III-N quantum wells at low …
verification for 100% internal quantum efficiency (IQE) of III-N quantum wells at low …
Excitons in a disordered medium: A numerical study in InGaN quantum wells
Excitons in InGaN quantum wells are investigated numerically, considering random alloy
disorder and Coulomb interaction on equal footing in the Schrödinger equation. Their …
disorder and Coulomb interaction on equal footing in the Schrödinger equation. Their …
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in -plane InGaN/GaN quantum wells
We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN
multiple quantum wells in the presence of n-type background do** by time-resolved …
multiple quantum wells in the presence of n-type background do** by time-resolved …
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
This paper reports a comprehensive analysis of the origin of the electroluminescence (EL)
peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral …
peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral …
Giant blueshifts of excitonic resonances in two-dimensional lead halide perovskite
Abstract Two-dimensional (2D) methylammonium lead halide perovskites (MAPbX 3) have
gained intensive research attention in past two years. Due to their quantum and dielectric …
gained intensive research attention in past two years. Due to their quantum and dielectric …