A Dual-Material Gate Junctionless Transistor With High- Spacer for Enhanced Analog Performance
RK Baruah, RP Paily - IEEE Transactions on electron devices, 2013 - ieeexplore.ieee.org
In this paper, we present a simulation study of analog circuit performance parameters for a
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …
A full-range drain current model for double-gate junctionless transistors
A drain current model available for full-range operation is derived for long-channel double-
gate junctionless transistors. Including dopant and mobile carrier charges, a continuous 1-D …
gate junctionless transistors. Including dopant and mobile carrier charges, a continuous 1-D …
Comparison of drain current characteristics of advanced MOSFET structures-a review
For the semiconductor industry, Complementary metal oxide semiconductor is contemplated
to be outstanding because of synthesis in Integrated Circuits (ICs). As transistor size is …
to be outstanding because of synthesis in Integrated Circuits (ICs). As transistor size is …
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
In this paper, we propose an approximate solution to solve the two dimensional potential
distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating …
distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating …
A quasi-two-dimensional threshold voltage model for short-channel junctionless double-gate MOSFETs
TK Chiang - IEEE Transactions on Electron Devices, 2012 - ieeexplore.ieee.org
Based on the bulk conduction mode of the quasi-2-D scaling theory, an analytical threshold
voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for …
voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for …
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
This work covers the impact of dual metal gate engineered Junctionless MOSFET with
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …
Semianalytical model of the subthreshold current in short-channel junctionless symmetric double-gate field-effect transistors
A Gnudi, S Reggiani, E Gnani… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric
double-gate field-effect transistors in subthreshold regime is proposed, which is based on …
double-gate field-effect transistors in subthreshold regime is proposed, which is based on …
Design and deep insights into sub-10 nm spacer engineered junctionless FinFET for nanoscale applications
N Vadthiya - ECS journal of solid state science and technology, 2021 - iopscience.iop.org
In this paper, we have studied the impact of various dielectric single-k (Sk) and dual-k (Dk)
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
This paper proposes a drain current model for triple-gate n-type junctionless nanowire
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
Threshold voltage in junctionless nanowire transistors
This work presents a physically based analytical model for the threshold voltage in
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …