High-density flash-memory chips are under tremendous demands with the exponential
growth of data. At the same time, the slow read performance of these high-density flash …

3-D NAND flash memory has become increasingly popular nonvolatile storage devices due
to large capacity and high performance. With the increase of program/erase (P/E) cycles and …

3D flash memories have been widely developed to further increase the storage capacity of
SSDs by vertically stacking multiple layers. However, this special physical structure brings …

Three-dimensional (3D) NAND flash memory has been frequently utilized in consumer
electronics as a popular storage device. However, data reliability has become an important …

The development of fifth-generation (5G) technology marks a significant milestone for digital
communication systems, providing substantial improvements in data transmission speeds …

Flash memory has gradually become the dominant storage device in the consumer market
and data centers since the storage capacity increases and production costs decline …

Temporary read errors (TRE) refers to the high temporary fail bit count (FBC) in the first read,
when 3D NAND recovers froman idle state. This can seriously deteriorate the Quality of …

With the development of NAND flash memories' bit density and stacking technologies, while
storage capacity keeps increasing, the issue of reliability becomes increasingly prominent …

High-density NAND flash memories have been prevailing in storage systems to achieve
large capacities for explosive data. However, they suffer from more severe reliability …

The 3-D flash memory is gradually becoming the mainstream nonvolatile storage medium
due to its high capacity and high performance. However, interlayer interference during 3-D …