In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

The authors survey the current state of phase change memory (PCM), a nonvolatile solid-
state memory technology built around the large electrical contrast between the highly …

Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high
performance and robustness, with the archival capabilities and low cost of conventional hard …

Graphene's single atomic layer of sp2 carbon has recently garnered much attention for its
potential use in electronic applications. Here, we report a memory application for graphene …

This paper describes the electrical characteristics of the metal nanocrystal memory devices
continued from the previous paper [see ibid., vol. 49, p. 1606-13, Sept. 2002]. Devices with …

A bandgap engineered SONOS with greatly improved reliability properties is proposed. This
concept is demonstrated by a multilayer structure of O1/N1/O2/N2/O3, where the ultra-thin" …

(57) ABSTRACT A circuit and method for self-converging programming of a charge storage
memory cell. Such as NROM or floating gate flash. The method includes determining a data …

A circuit and method for self-converging programming of a charge storage memory cell, such
as NROM or floating gate flash. The method includes determining a data value from one of …

Data retention loss in a localized trap** storage flash memory cell with a SONOS type
structure is investigated. Both charge loss through the bottom oxide and lateral migration of …

US7535048B2 - NROM memory cell, memory array, related devices and methods - Google
Patents US7535048B2 - NROM memory cell, memory array, related devices and methods …