We present a study of a sub-nanometre interlayer of crystalline silicon nitride at the Ni/Si
interface. We performed transmission electron microscopy measurements complemented by …

Due to the constant downscaling of microelectronic devices, thin films of Ni-Pt monosilicide,
Ni (Pt) Si, are widely used as contact materials on the active regions of complementary metal …

The diffusional phase transformations in inhomogeneous multicomponent systems play an
important role in affecting the material properties. Ternary line compounds, which are ternary …

The first stages of the growth of the NiSi phase at the expense of θ-Ni 2 Si have been
studied mainly by in-situ XRD measurements and atom probe tomography (APT) analysis. In …

Integration of biochemical reaction networks (BRNs) with biosensor platforms has emerged
as a technological niche overcoming challenges related to the loss of sensitivity and …

The impact of the Pre Amorphization by Ge Implantation (PAI) on Ni 0.9 Pt 0.1 silicide is
studied. Reactions between a 10 nm thick Ni 0.9 Pt 0.1 film and Si (100) substrate are …

Diffusion barriers play an important role in numerous phase formation processes. A well
known example in microelectronics is the reactive diffusion growth of silicide thin films which …

In the scope of integrating III–V device contacts on a 300 mm platform, Ni-based contacts are
envisioned. In this regard, the Pt redistribution in the Ni 0.9 Pt 0.1/InP system, and the impact …

In this paper, we consider the problem of interaction of a spherical iron oxide particle with an
aluminum melt surrounding it. A comparison of two different approaches to describing the …

Silicide formation by reactive diffusion is of interest in numerous applications especially for
contact formation and interconnections in microelectronics. Several reviews have been …