Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference
from DUV light at ground and low altitude. Therefore, DUV detection has high applications in …

Beta-gallium oxide (β-Ga 2 O 3)-based heterojunction photodetectors (HJPDs) based on pn
heterojunction have drawn a lot of attention since p-type do** of β-Ga 2 O 3 is challenging …

In recent years, heterojunction photodetectors have been proposed as promising
optoelectronics. The heterojunction photodetectors have garnered attention on a global …

Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

The growing demand for efficient and cost-effective optoelectronic devices has motivated
extensive research into advanced photodetector architectures. This work realizes a robust …

In this work, a PEDOT: PSS/Sn: α-Ga 2 O 3 hybrid heterojunction diode (HJD) photodetector
was fabricated by spin-coating highly conductive PEDOT: PSS aqueous solution on the mist …

Constructing nanoheterojunction is a crucial approach to achieving self-powered ultraviolet
photodetectors based on Ga2O3. Two-dimensional modified NiS2 nanosheets are excellent …

Lead-free perovskite-like semiconductors exhibit promising optoelectronic properties for
various applications, including signal detection. However, the photocurrent density in these …

The ε-Ga 2 O 3 pyroelectric material is ideal for DUV photodetectors, especially for high-
temperature applications like atmospheric monitoring and flame detection. This study …

All-inorganic perovskites, with their low-cost, simple processes and superior heat stability,
have become potential candidate materials for photodetectors (PDs). However, they have no …