Temperature-driven journey of dark excitons to efficient photocatalytic water splitting in β-AsP
Limited availability of photogenerated charge carriers in two-dimensional (2D) materials,
due to high exciton binding energies, is a major bottleneck in achieving efficient …
due to high exciton binding energies, is a major bottleneck in achieving efficient …
Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics
Epitaxial InAs-based nanowire (NW) arrays have recently gained attention as promising
materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based …
materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based …
Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
We perform a structural and optical characterization of InAs 1− x N x epilayers grown by
molecular beam epitaxy on InAs substrates (x≲ 2.2%). High-resolution x-ray diffraction …
molecular beam epitaxy on InAs substrates (x≲ 2.2%). High-resolution x-ray diffraction …
Effect of low nitrogen concentrations on the electronic properties of
We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect
studies of a series of n-type InAs 1− x N x epilayers grown on GaAs with x up to 1%. The well …
studies of a series of n-type InAs 1− x N x epilayers grown on GaAs with x up to 1%. The well …
Development of dilute nitride materials for mid-infrared diode lasers
A Krier, M De la Mare, PJ Carrington… - Semiconductor …, 2012 - iopscience.iop.org
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the
3–4 µm spectral range is described. The dilute nitrides are found to offer improved …
3–4 µm spectral range is described. The dilute nitrides are found to offer improved …
Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN
The lattice dynamical properties of dilute InAs1− xNx/InP (001) epilayers (0≤ x≤ 0.03)
grown by gas-source molecular beam epitaxy were carefully studied experimentally and …
grown by gas-source molecular beam epitaxy were carefully studied experimentally and …
Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth
We report on the comparative studies of photoluminescence (PL) properties of molecular
beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the …
beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the …
[HTML][HTML] Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
Extended wavelength photoluminescence emission within the technologically important 2–5
μm spectral range has been demonstrated from InAs 1− x N x and In 1− y Ga y As 1− x N x …
μm spectral range has been demonstrated from InAs 1− x N x and In 1− y Ga y As 1− x N x …
Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band Model
We have used both 16-band and 14-band kp Hamiltonians to investigate electronic band-
structure, optical gain and transitions of two type-II quantum wells with InAs and InAs 0.98 N …
structure, optical gain and transitions of two type-II quantum wells with InAs and InAs 0.98 N …
The influence of nitrogen and antimony on the optical quality of InNAs (Sb) alloys
In this work we present detailed studies of the influence of nitrogen and antimony on the
optical quality of InNAs (Sb) alloys. We employed photoluminescence, photoreflectance and …
optical quality of InNAs (Sb) alloys. We employed photoluminescence, photoreflectance and …