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Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …
environmental sensing of hazardous gases, security, defense, and medical applications …
InAs/GaSb Type‐II Superlattice Detectors
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
Time-resolved photoluminescence measurements reveal a minority carrier lifetime of> 412
ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs 0.72 Sb 0.28 type-II …
ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs 0.72 Sb 0.28 type-II …
Recombination dynamics study on nanostructured perovskite light‐emitting devices
The field of organic–inorganic hybrid perovskite light‐emitting diodes (PeLEDs) has
developed rapidly in recent years. Although the performance of PeLEDs continues to …
developed rapidly in recent years. Although the performance of PeLEDs continues to …
Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
The temperature dependence of the nonequilibrium carriers lifetime has been deduced from
the measurement of the photocurrent response in InAs/GaSb superlattices. Based on the …
the measurement of the photocurrent response in InAs/GaSb superlattices. Based on the …
Type-II superlattice infrared detectors
Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …
Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation
Pump-probe transmission experiments have been performed on PbSe above the
fundamental absorption edge near 4 μm in the temperature range 30 to 300 K, using the …
fundamental absorption edge near 4 μm in the temperature range 30 to 300 K, using the …
Thermoradiative devices enabled by hyperbolic phonon polaritons at nanoscales
Theromoradiative (TR) devices, though proposed a decade ago, have seen little
investigation due to their low-performance compared to other solid-state energy conversion …
investigation due to their low-performance compared to other solid-state energy conversion …
InAs/InAsSb type-II strained-layer superlattice infrared photodetectors
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …
the last decade as a viable infrared detector material with a continuously adjustable band …
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
A comparison is performed between measured and calculated Auger recombination rates
for four different narrow-gap superlattices based on the InAs/GaSb/AlSb material system …
for four different narrow-gap superlattices based on the InAs/GaSb/AlSb material system …