Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron
capture cross section, and robust chemical, thermal, and mechanical properties, amorphous …

In this study, a relatively simple and direct method is used to prepare germanium
nanoparticles (Ge NPs) embedded in the pore tunnels of an N-doped mesoporous carbon …

Amorphous non‐hydrogenated germanium carbide (a‐Ge1− xCx) films have been
deposited using magnetron co‐sputtering technique by varying the sputtering power of …

Non-hydrogenated germanium carbide (Ge 1− x C x) films were prepared by magnetron co-
sputtering method in a discharge of Ar. The surface topography, chemical bonding …

Do** enables the effective tuning of the properties of semiconductor nanocrystals (NCs).
In this paper, germanium (Ge) NCs are doped with boron (B) in nonthermal plasma. It is …

Ge nanowires are playing a big role in the development of new functional microelectronic
modules, such as gate-all-around field-effect transistor devices, on-chip lasers and …

The growth of amorphous hydrogenated germanium carbide (a-GeCx: H) alloys was
performed with high deposition rates by radiolysis chemical vapor deposition (X-ray) of …

Surface quality is a key issue in semiconductor structures for device applications. Typical
surface defects are blisters. Here we investigate on the relationship between the activation …

Hydrogenated amorphous germanium, a-Ge: H, is a material of interest for optoelectronic
applications such as solar cells and radiation detectors because of the material's potential to …

Hydrogenated amorphous germanium carbon (a-Ge 1-x C x: H) films were deposited by
using magnetron co-sputtering starting from a mixed target of germanium and graphite in Ar …