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GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
[HTML][HTML] Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties
We present detailed investigations of the structural, elastic, dielectric, and piezoelectric
properties of scandium aluminum nitride (Sc x Al 1− x N) with the wurtzite crystal structure by …
properties of scandium aluminum nitride (Sc x Al 1− x N) with the wurtzite crystal structure by …
Monolithically integrated gan gate drivers–a design guide
In recent years, an increasing trend towards GaN integration can be observed, enabled by
the lateral structure of the GaN technology. A key improvement over a discrete …
the lateral structure of the GaN technology. A key improvement over a discrete …
Building blocks for GaN power integration
GaN technology is on the advance for the use in power ICs thanks to space-saving
integrated circuit components and the increasing number of integrated devices. This work …
integrated circuit components and the increasing number of integrated devices. This work …
3.4-kV AlGaN/GaN Schottky barrier diode on silicon substrate with engineered anode structure
R Xu, P Chen, M Liu, J Zhou, Y Li… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes
(SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process …
(SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process …
2.0 kV/2.1 mΩ·cm2 Lateral p-GaN/AlGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment
X Wei, X Zhang, W Tang, W Liu, X Zhou… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This letter demonstrates high-performance lateral p-GaN/AlGaN/GaN hybrid anode diodes
(HPT-HADs) using a novel hydrogen plasma treatment. Without field plates (FPs) or …
(HPT-HADs) using a novel hydrogen plasma treatment. Without field plates (FPs) or …
ON-resistance analysis of GaN reverse-conducting HEMT with distributive built-in SBD
Recently, a GaN reverse-conducting high-electron-mobility transistor (RC-HEMT) has been
demonstrated. The RC-HEMT features built-in distributive Schottky contacts, which provide a …
demonstrated. The RC-HEMT features built-in distributive Schottky contacts, which provide a …
1.3 kV reverse-blocking AlGaN/GaN MISHEMT with ultralow turn-on voltage 0.25 V
H Wang, W Mao, S Zhao, M Du, Y Zhang… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility
transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional …
transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional …
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
X Kang, Y Zheng, H Wu, K Wei, Y Sun… - Semiconductor …, 2021 - iopscience.iop.org
In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-
barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating …
barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating …
Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier
In this work, a-Ga 2 O 3 field-effect rectifier (FER) with a p-NiO x gate aimed at low
conduction loss, low leakage current, and capability of on-chip integration has been …
conduction loss, low leakage current, and capability of on-chip integration has been …