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Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold …
In this paper, the potential distribution for symmetric double gate stack-oxide junctionless
field effect transistor (DGS-JLFET) in subthreshold region has been observed. Using the …
field effect transistor (DGS-JLFET) in subthreshold region has been observed. Using the …
Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with SiO2 and high-k dielectrics
In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire
junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed …
junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed …
Impact of device parameter variation on the electrical characteristic of n-type junctionless nanowire transistor with high-k dielectrics
MA Sule, M Ramakrishnan, NE Alias… - … Journal of Electrical …, 2020 - section.iaesonline.com
Metallurgical junction and thermal budget are serious constraints in scaling and
performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To …
performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To …
[PDF][PDF] Impact of gate insulation material and thickness on pocket implanted MOS device
MH Bhuyan - … Journal of Electronics and Communication Engineering, 2021 - wseas.com
This paper reports on the impact study with the variation of the gate insulation material and
thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate …
thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate …
[PDF][PDF] Comparative Study of Trigate SOI FinFET and Trigate JL SOI FinFET Structures
B Fakhr, SE Hosseini - 2016 - sid.ir
Comparative Study of Trigate SOI FinFET and Trigate JL SOI FinFET Structures Page 1
Comparative Study of Trigate SOI FinFET and Trigate JL SOI FinFET Structures B.Fakhr …
Comparative Study of Trigate SOI FinFET and Trigate JL SOI FinFET Structures B.Fakhr …
[PDF][PDF] SCEs Investigation of Tri-Gate SOI FinFET in Different Channel Lengthes
B Fakhr, SE Hosseini - 2015 - sid.ir
Abstract compact scaling length for Tri-gate SOI FinFET is presented based on a 3-D
simulation. SCEs of FinFETs can be controlled by changing the gate length. Changing …
simulation. SCEs of FinFETs can be controlled by changing the gate length. Changing …
[Цитат][C] Simulation Studies on Gate Electrostatics of Junctionless Transistor
S Choudhary - 2018 - National Institute of Technology …