Self-powered broadband photodetectors have attracted great interest due to their
applications in biomedical imaging, integrated circuits, wireless communication systems …

Optoelectronic devices based on geometrically asymmetric architecture have recently
attracted attention due to their high performance as photodetectors and simple fabrication …

The capacitance/conductance-voltage-frequency (C/GVf) features of the Au/p-Si structures
with (% 0.5 Bi-doped ZnO) interlayer grown by spin-coating technique was investigated …

Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO
and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering …

Capacitance and conductance measurements were made to evaluate the effects of voltage
and frequency on the dielectric properties, ac electrical conductivity (σ ac), and electric …

Copper sulfide (CuS) rod shaped nanostructures with an average length 8 to 10 nm are
synthesized through green chemical route using biodegradable starch as a cap** agent …

Pure and zinc-doped cobalt oxide heterojunction devices on n-type silicon substrates have
been fabricated via sol-gel spin coating deposition. The fabricated devices have been …

The potential for improving the performance of a silicon photodetector using a
nanostructured window layer has drawn significant attention due to its large surface area …

In this article, evidence for the existence of illumination and bias-dependent negative
differential conductance (NDC) in Ni-doped Al/ZnO/p-Si Schottky diodes, and the possible …

The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type
(100) silicon. The SEM image shows the formation of micropod-like ZnO. EDX and XPS …