Challenges of emerging memory and memristor based circuits: Nonvolatile logics, IoT security, deep learning and neuromorphic computing
C Dou, WH Chen, YJ Chen, HT Lin… - 2017 IEEE 12th …, 2017 - ieeexplore.ieee.org
Emerging nonvolatile memory (NVM) devices are not limited to build nonvolatile memory
macros. They can also be used in develo** nonvolatile logics (nvLogics) for nonvolatile …
macros. They can also be used in develo** nonvolatile logics (nvLogics) for nonvolatile …
A 7T1R nonvolatile SRAM with high stability, low delay and low power consumption embedded with transmission gates (TGs)
Y Zhu, Y **a, S Cheng, Y Sun… - 2022 IEEE 16th …, 2022 - ieeexplore.ieee.org
In this paper, we propose a novel 7T1R nonvolatile SRAM (NVSRAM) 1) to improve the write
ability in SRAM read/write mode by introducing write assist feature 2) to add PMOS …
ability in SRAM read/write mode by introducing write assist feature 2) to add PMOS …
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
XL Zhou, YH Chen, CH Jia, XL Ye, B Xu… - Journal of Physics D …, 2010 - iopscience.iop.org
In this report, we have investigated the temperature and injection power dependent
photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and …
photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and …
Photoluminescence of self-assembled InAs/GaAs quantum dots excited by ultraintensive femtosecond laser
S Huang, Y Ling - Journal of Applied Physics, 2009 - pubs.aip.org
This paper presents the ultrahigh excitation intensity-dependent photoluminescence
(UEIPL) spectra of self-assembled InAs/GaAs quantum dots (QDs) excited by femtosecond …
(UEIPL) spectra of self-assembled InAs/GaAs quantum dots (QDs) excited by femtosecond …
A Novel Hybrid Nonvolatile SRAM for Suppressing Leakage Power Using Tunnel FET
X Hong, H Cai - 2021 IEEE 14th International Conference on …, 2021 - ieeexplore.ieee.org
A hybrid design proposal for nonvolatile (NV) SRAM bit-cell is implemented in this work.
Magnetic tunnel junction (MTJ) and Tunnel field effect transistor (TFET) are hierarchically …
Magnetic tunnel junction (MTJ) and Tunnel field effect transistor (TFET) are hierarchically …
A HfO2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications
J Li, Y Zhao, B Peng, X Liu, Q Hu, S Dai… - 2021 IEEE 14th …, 2021 - ieeexplore.ieee.org
This paper presents a novel 10T2C non-volatile SRAM (nvSRAM) based on HfO 2
ferroelectric capacitor (FeCAP) for low power IoT applications. Emerging memory based …
ferroelectric capacitor (FeCAP) for low power IoT applications. Emerging memory based …
Temperature-dependent optical properties of InAs/GaAs self-assembled quantum dots: spectroscopic measurements and an eight-band study
XH Zhou, PP Chen, XS Chen, W Lu - Chinese Physics Letters, 2011 - iopscience.iop.org
The temperature-dependent optical properties of InAs/GaAs self-assembled quantum dots
are studied by spectroscopic measurements along with the corresponding theoretical …
are studied by spectroscopic measurements along with the corresponding theoretical …
Enhancement of two-photon excited fluorescence from quantum dots on SiN photonic crystals
X Xu, T Yamada, R Ueda - 2009 6th IEEE International …, 2009 - ieeexplore.ieee.org
Enhancement of two-photon excited fluorescence from quantum dots on SiN photonic crystals
Page 1 Enhancement of two-photon excited fluorescence from quantum dots on SiN photonic …
Page 1 Enhancement of two-photon excited fluorescence from quantum dots on SiN photonic …