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Vapor phase growth of semiconductor nanowires: key developments and open questions
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
Semiconductor nanowires: to grow or not to grow?
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
Sub-nanometer map** of strain-induced band structure variations in planar nanowire core-shell heterostructures
Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key
role in determining their morphologies, crystal structure and properties. To unveil those …
role in determining their morphologies, crystal structure and properties. To unveil those …
The role of polarity in nonplanar semiconductor nanostructures
The lack of mirror symmetry in binary semiconductor compounds turns them into polar
materials, where two opposite orientations of the same crystallographic direction are …
materials, where two opposite orientations of the same crystallographic direction are …
Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers
C Messina, Y Gong, O Abouzaid… - Advanced Optical …, 2023 - Wiley Online Library
Photonic crystals can be used to achieve high‐performance surface‐emitting lasers and
enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs …
enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs …
Nanoscale gallium phosphide epilayers on sapphire for low-loss visible nanophotonics
Gallium phosphide is a low-loss, high-refractive-index semiconductor considered as a
promising material for active and passive components in modern nanophotonics. In this …
promising material for active and passive components in modern nanophotonics. In this …
III–V integration on Si (100): vertical nanospades
III–V integration on Si (100) is a challenge: controlled vertical vapor liquid solid nanowire
growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs …
growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs …
Polarity-dependent nonlinear optics of nanowires under electric field
Polar materials display a series of interesting and widely exploited properties owing to the
inherent coupling between their fixed electric dipole and any action that involves a change …
inherent coupling between their fixed electric dipole and any action that involves a change …
GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi… - Nanoscale, 2022 - pubs.rsc.org
With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
Phase-pure wurtzite GaAs nanowires grown by Self-catalyzed selective area molecular beam epitaxy for advanced laser devices and quantum disks
MM Jansen, P Perla, M Kaladzhian… - ACS applied nano …, 2020 - ACS Publications
The control of the crystal phase in self-catalyzed nanowires (NWs) is one of the central
remaining open challenges in the research field of III/V semiconductor NWs. While several …
remaining open challenges in the research field of III/V semiconductor NWs. While several …