Vapor phase growth of semiconductor nanowires: key developments and open questions

L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Semiconductor nanowires: to grow or not to grow?

PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Sub-nanometer map** of strain-induced band structure variations in planar nanowire core-shell heterostructures

S Martí-Sánchez, M Botifoll, E Oksenberg… - Nature …, 2022 - nature.com
Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key
role in determining their morphologies, crystal structure and properties. To unveil those …

The role of polarity in nonplanar semiconductor nanostructures

M De La Mata, RR Zamani, S Martí-Sánchez… - Nano …, 2019 - ACS Publications
The lack of mirror symmetry in binary semiconductor compounds turns them into polar
materials, where two opposite orientations of the same crystallographic direction are …

Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers

C Messina, Y Gong, O Abouzaid… - Advanced Optical …, 2023 - Wiley Online Library
Photonic crystals can be used to achieve high‐performance surface‐emitting lasers and
enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs …

Nanoscale gallium phosphide epilayers on sapphire for low-loss visible nanophotonics

VV Fedorov, OY Koval, DR Ryabov… - ACS Applied Nano …, 2022 - ACS Publications
Gallium phosphide is a low-loss, high-refractive-index semiconductor considered as a
promising material for active and passive components in modern nanophotonics. In this …

III–V integration on Si (100): vertical nanospades

L Güniat, S Martí-Sánchez, O Garcia, M Boscardin… - ACS …, 2019 - ACS Publications
III–V integration on Si (100) is a challenge: controlled vertical vapor liquid solid nanowire
growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs …

Polarity-dependent nonlinear optics of nanowires under electric field

R Ben-Zvi, O Bar-Elli, D Oron, E Joselevich - Nature communications, 2021 - nature.com
Polar materials display a series of interesting and widely exploited properties owing to the
inherent coupling between their fixed electric dipole and any action that involves a change …

GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting

C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi… - Nanoscale, 2022 - pubs.rsc.org
With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …

Phase-pure wurtzite GaAs nanowires grown by Self-catalyzed selective area molecular beam epitaxy for advanced laser devices and quantum disks

MM Jansen, P Perla, M Kaladzhian… - ACS applied nano …, 2020 - ACS Publications
The control of the crystal phase in self-catalyzed nanowires (NWs) is one of the central
remaining open challenges in the research field of III/V semiconductor NWs. While several …