Micro‐and nanomechanical structures for silicon carbide MEMS and NEMS

CA Zorman, RJ Parro - physica status solidi (b), 2008 - Wiley Online Library
Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high
temperature electronics owing to its outstanding electrical properties combined with mature …

Planar amorphous silicon carbide microelectrode arrays for chronic recording in rat motor cortex

JR Abbott, EN Jeakle, P Haghighi, JO Usoro… - Biomaterials, 2024 - Elsevier
Chronic implantation of intracortical microelectrode arrays (MEAs) capable of recording from
individual neurons can be used for the development of brain-machine interfaces. However …

Merged-element transmon

R Zhao, S Park, T Zhao, M Bal, CRH McRae, J Long… - Physical Review …, 2020 - APS
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting
circuits. However, they have some drawbacks that still need to be addressed. Most …

[HTML][HTML] Demonstration of DC Kerr effect induced high nonlinear susceptibility in silicon rich amorphous silicon carbide

LYS Chang, H Nejadriahi, S Pappert, PKL Yu - Applied Physics Letters, 2022 - pubs.aip.org
In this study, we demonstrate the DC Kerr effect in plasma-enhanced chemical vapor
deposition silicon rich amorphous silicon carbide (a-SiC). Using the resonance shift of the …

Hydrogenated amorphous silicon carbide: A low-loss deposited dielectric for microwave to submillimeter-wave superconducting circuits

BT Buijtendorp, S Vollebregt, K Karatsu, DJ Thoen… - Physical Review …, 2022 - APS
Low-loss deposited dielectrics will benefit superconducting devices such as integrated
superconducting spectrometers, superconducting qubits, and kinetic inductance parametric …

Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics for metal-insulator-metal capacitor applications

SJ Ding, C Zhu, MF Li, DW Zhang - Applied Physics Letters, 2005 - pubs.aip.org
Atomic-layer-deposited Al 2 O 3–Hf O 2–Al 2 O 3 dielectrics have been investigated to
replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator …

[HTML][HTML] A Flexible a-SiC-Based Neural Interface Utilizing Pyrolyzed-Photoresist Film (C) Active Sites

C Feng, CL Frewin, MRE Tanjil, R Everly, J Bieber… - Micromachines, 2021 - mdpi.com
Carbon containing materials, such as graphene, carbon-nanotubes (CNT), and graphene
oxide, have gained prominence as possible electrodes in implantable neural interfaces due …

Formation, Structure, and Function of Hydrogenated and Fluorinated Long‐Chain Phosphonate‐Modified Single‐Walled Carbon Nanotubes with Bidentate Bonds

Y Abiko, T Hayasaki, S Hirayama, AA Almarasy… - …, 2020 - Wiley Online Library
The dispersion of hydrophilized single‐walled carbon nanotube (SWCNT) in organic
solvent, through the modification of its surface by bidentate long‐chain phosphonic acid with …

[HTML][HTML] Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles

S Isaković, M Đekić, M Tkalčević, D Boršćak, I Periša… - Crystals, 2022 - mdpi.com
The properties of semiconductor materials can be strongly affected by the addition of
metallic nanoparticles. Here we investigate the properties of SiC+ Au and Si3N4+ Au thin …

Comparison of H2 and NH3 Treatments for Copper Interconnects

YM Chang, J Leu, BH Lin, YL Wang… - Advances in Materials …, 2013 - Wiley Online Library
The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after
ammonia (NH3) or hydrogen (H2) plasma treatment were investigated in this study. The …