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Micro‐and nanomechanical structures for silicon carbide MEMS and NEMS
CA Zorman, RJ Parro - physica status solidi (b), 2008 - Wiley Online Library
Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high
temperature electronics owing to its outstanding electrical properties combined with mature …
temperature electronics owing to its outstanding electrical properties combined with mature …
Planar amorphous silicon carbide microelectrode arrays for chronic recording in rat motor cortex
Chronic implantation of intracortical microelectrode arrays (MEAs) capable of recording from
individual neurons can be used for the development of brain-machine interfaces. However …
individual neurons can be used for the development of brain-machine interfaces. However …
Merged-element transmon
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting
circuits. However, they have some drawbacks that still need to be addressed. Most …
circuits. However, they have some drawbacks that still need to be addressed. Most …
[HTML][HTML] Demonstration of DC Kerr effect induced high nonlinear susceptibility in silicon rich amorphous silicon carbide
In this study, we demonstrate the DC Kerr effect in plasma-enhanced chemical vapor
deposition silicon rich amorphous silicon carbide (a-SiC). Using the resonance shift of the …
deposition silicon rich amorphous silicon carbide (a-SiC). Using the resonance shift of the …
Hydrogenated amorphous silicon carbide: A low-loss deposited dielectric for microwave to submillimeter-wave superconducting circuits
Low-loss deposited dielectrics will benefit superconducting devices such as integrated
superconducting spectrometers, superconducting qubits, and kinetic inductance parametric …
superconducting spectrometers, superconducting qubits, and kinetic inductance parametric …
Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics for metal-insulator-metal capacitor applications
Atomic-layer-deposited Al 2 O 3–Hf O 2–Al 2 O 3 dielectrics have been investigated to
replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator …
replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator …
[HTML][HTML] A Flexible a-SiC-Based Neural Interface Utilizing Pyrolyzed-Photoresist Film (C) Active Sites
Carbon containing materials, such as graphene, carbon-nanotubes (CNT), and graphene
oxide, have gained prominence as possible electrodes in implantable neural interfaces due …
oxide, have gained prominence as possible electrodes in implantable neural interfaces due …
Formation, Structure, and Function of Hydrogenated and Fluorinated Long‐Chain Phosphonate‐Modified Single‐Walled Carbon Nanotubes with Bidentate Bonds
Y Abiko, T Hayasaki, S Hirayama, AA Almarasy… - …, 2020 - Wiley Online Library
The dispersion of hydrophilized single‐walled carbon nanotube (SWCNT) in organic
solvent, through the modification of its surface by bidentate long‐chain phosphonic acid with …
solvent, through the modification of its surface by bidentate long‐chain phosphonic acid with …
[HTML][HTML] Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles
The properties of semiconductor materials can be strongly affected by the addition of
metallic nanoparticles. Here we investigate the properties of SiC+ Au and Si3N4+ Au thin …
metallic nanoparticles. Here we investigate the properties of SiC+ Au and Si3N4+ Au thin …
Comparison of H2 and NH3 Treatments for Copper Interconnects
YM Chang, J Leu, BH Lin, YL Wang… - Advances in Materials …, 2013 - Wiley Online Library
The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after
ammonia (NH3) or hydrogen (H2) plasma treatment were investigated in this study. The …
ammonia (NH3) or hydrogen (H2) plasma treatment were investigated in this study. The …