Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

The recent controversy on the bandgap of InN is addressed, with reference to optical data on
single crystalline thin film samples grown on sapphire. The optical absorption spectra …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

Using one material system from the near infrared into the ultraviolet is an attractive goal, and
may be achieved with (In, Al, Ga) N. This III-N material system, famous for enabling blue and …

CdO has been studied for decades as a prototypical wide band gap transparent conducting
oxide with excellent n-type ability. Despite this, uncertainty remains over the source of …

Using quasiparticle band structures based on modern electronic-structure theory, we
calculate the branch-point energies for zinc blende (GaN, InN), rocksalt (MgO, CdO), wurtzite …

We report on the low-field electron mobility in bulk wurtzite InN at room temperature and
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …

The influence of the growth parameters on the photoluminescence (PL) spectra has been
investigated for samples with columnar morphology, either with InN columns on original …

We present most recent developments to calculate the electronic states of semiconductors
and insulators without taking into account experimental parameters. They are based on the …