Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Green synthesized ZnO@ CuO nanocomposites using Achyranthes aspera leaves extract for dielectric applications
Abstract ZnO@ CuO Nanocomposites (NCPs) were synthesized using Achyranthes aspera
plant's leaves extract with varying weight percents of 25, 50 and 75 of ZnO. The leaves …
plant's leaves extract with varying weight percents of 25, 50 and 75 of ZnO. The leaves …
Hafnium oxide-based ferroelectric devices for in-memory computing: resistive and capacitive approaches
The integration of ferroelectric hafnium oxide (HfO2) into semiconductor device structures
has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) …
has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) …
A six-level ferroelectric storage cell based on a bidirectional imprint field
The need for novel memory devices with low energy usage, strong reliability, and multi-level
capacity is growing significantly nowadays. Among one of the promising candidates, hafnia …
capacity is growing significantly nowadays. Among one of the promising candidates, hafnia …
Monolithic three-dimensional hafnia-based artificial nerve system
Artificial nerve systems that mimic the tactile perception ability of human skin could be
adopted in the realization of devices for a hyperconnected society, including prosthetic …
adopted in the realization of devices for a hyperconnected society, including prosthetic …
Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing
Ferroelectric Hf0. 5Zr0. 5O2 (HZO) capacitors have been extensively explored for in-memory
computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) …
computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) …
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO Film by Fast Ram** and Fast Cooling Process
L Zhang, G Kim, S Lee, H Shin, Y Lim… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Hafnia-based ferroelectrics (FEs) can be stabilized via careful engineering, both kinetically
and thermodynamically. Especially, the fast cooling process has been regarded as an …
and thermodynamically. Especially, the fast cooling process has been regarded as an …
Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer …
K Yang, M Jung, T Jung, JS Yoon… - ACS Applied …, 2024 - ACS Publications
Hafnia ferroelectrics are gaining significance in nonvolatile memory, logic devices, and
neuromorphic computing because of their rapid switching speed, exceptional reliability, and …
neuromorphic computing because of their rapid switching speed, exceptional reliability, and …
Stabilization of Morphotropic Phase Boundary in Hafnia via Microwave Low‐Temperature Crystallization Process for Next‐Generation Dynamic Random Access …
The morphotropic phase boundary (MPB), which arises from the combination of
antiferroelectric and ferroelectric phases, demonstrates the highest dielectric constant (κ) …
antiferroelectric and ferroelectric phases, demonstrates the highest dielectric constant (κ) …
[HTML][HTML] Optimal Process Design for Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance
H Wang, J Qi, X **e, Z Liu, W Wu, C Lee - Electronics, 2024 - mdpi.com
Ferroelectric hafnium and zirconium oxides have recently garnered significant attention due
to their potential applications in in-memory computing. In this study, we present an optimized …
to their potential applications in in-memory computing. In this study, we present an optimized …