Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for
the development of nonvolatile magnetic memory and computing technologies due to their …

The development of spintronic devices based on spin–orbit torque requires the electrical-
current-driven field-free switching of magnetization in materials with perpendicular magnetic …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Ferromagnets are known to support spin-polarized currents that control various spin-
dependent transport phenomena useful for spintronics. On the contrary, fully compensated …

The emerging all‐van der Waals (vdW) magnetic heterostructure provides a new platform to
control the magnetization by the electric field beyond the traditional spintronics devices. One …

Current-induced spin torques enable the electrical control of the magnetization with low
energy consumption. Conventional magnetic random access memory (MRAM) devices rely …

Cubic materials host high crystal symmetry and hence are not expected to support
anisotropy in transport phenomena. In contrast to this common expectation, here we report …

After decades of efforts, some fundamental physics for electrical switching of magnetization
is still missing. Here, we report the discovery of the long-range intralayer Dzyaloshinskii …

Manipulating spin polarization orientation is challenging but crucial for field-free spintronic
devices. Although such manipulation has been demonstrated in a limited number of …