Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective
Despite the remarkable development in ferroelectric HfO 2-based FETs, key reliability
challenges (eg, retention, endurance, etc.) may still limit their widespread adoption in …
challenges (eg, retention, endurance, etc.) may still limit their widespread adoption in …
The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics
The distribution of breakdown times of thin film dielectrics, stressed in a constant voltage
mode, is generally interpreted in terms of percolation theory of dielectric breakdown. The …
mode, is generally interpreted in terms of percolation theory of dielectric breakdown. The …
High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics
Stacked intermetal dielectrics grown by a Plasma Enhanced Chemical Vapor Deposition
(PECVD) technique are widely used as a capacitive voltage divider to integrate low and high …
(PECVD) technique are widely used as a capacitive voltage divider to integrate low and high …
Physics of defect generation in high-k and ferroelectric materials and their reliability implications for advanced electronic devices
M Masuduzzaman - 2012 - search.proquest.com
As the SiO2-based classical transistor reaches its scaling limit, a broad range of alternate
dielectric materials are being explored for classical CMOS as well as other emerging …
dielectric materials are being explored for classical CMOS as well as other emerging …